Structural, optical and microwave dielectric properties of Ba(Ti1−xSnx)4O9, 0 ≤ x ≤ 0.7 ceramics
Asad Ali, Sarir Uddin, Madan Lal, Abid Zaman, Zafar Iqbal, Khaled Althubeiti
Abstract
Abstract Sn-doped BaTi 4 O 9 (BT4) dielectric ceramics were prepared by a mixed oxide route. Preliminary X-ray diffraction (XRD) structural study shows that the ceramic samples have orthorhombic symmetry with space group (Pnmm). Scanning electron microscopy (SEM) shows that the grain size of the samples decreases with an increase in Sn 4+ content. The presence of the metal oxide efficient group was revealed by Fourier transform infrared (FTIR) spectroscopy. The photoluminescence spectra of the ceramic samples reported red color ~ 603, 604, 606.5 and 605 nm with excitation energy ~ 2.06, 2.05, 2.04 and 2.05 eV for Sn 4+ content with x = 0.0, 0.3, 0.5, and 0.7, respectively. The microwave dielectric properties of these ceramic samples were investigated by an impedance analyzer. The excellent microwave dielectric properties i.e. high dielectric constant (ε r = 57.29), high-quality factor (Q f = 11,852), or low-dielectric loss (3.007) has been observed.