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Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending

Qingzhong Gui, Wei Yu, Chunmin Cheng, Hailing Guo, Xiaoming Zha, Ruyue Cao, Hongxia Zhong, John Robertson, Sheng Liu, Zhaofu Zhang, Zhuo Jiang, Yuzheng Guo, Yuzheng Guo

2024Journal of Material Science and Technology13 citationsDOI

Topics & Concepts

DiamondBand bendingDopingAcceptorElectron transferMaterial properties of diamondChemical physicsHydrogenMaterials scienceChemistryFermi levelElectronNanotechnologyCondensed matter physicsOptoelectronicsPhotochemistryComposite materialPhysicsOrganic chemistryQuantum mechanicsDiamond and Carbon-based Materials ResearchElectronic and Structural Properties of OxidesSemiconductor materials and devices
Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending | Litcius