Deep learning inter-atomic potential for irradiation damage in 3C-SiC
Yong Liu, Hao Wang, Linxin Guo, Zhanfeng Yan, Jian Zheng, Wei Zhou, Jianming Xue
Abstract
We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler–Biersack–Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which are most commonly used in molecular dynamics simulations of 3C-SiC. Not only for equilibrium properties but also for significant properties of radiation damage such as defect formation energies and threshold displacement energies, our deep-learning potential gave closer predictions to the DFT criterion than analytical potentials. The deep-learning potential framework solved the long-standing dilemma that traditional empirical potentials currently applied in 3C-SiC radiation damage simulations gave large disparities with each other and were inconsistent with ab initio calculations . A more realistic depiction of the primary irradiation damage process in 3C-SiC can be given and the accuracy of classical molecular dynamics simulation for cubic silicon carbide can be expected to the level of quantum mechanics .