An Improved Prediction Model of IGBT Junction Temperature Based on Backpropagation Neural Network and Kalman Filter
Yu Dou
Abstract
With the rapid development of emerging technologies such as electric vehicles and high‐speed railways, the insulated gate bipolar transistor (IGBT) is becoming increasingly important as the core of the power electronic devices. Therefore, it is imperative to maintain the stability and reliability of IGBT under different circumstances. By predicting the junction temperature of IGBT, the operating condition and aging degree can be roughly evaluated. However, the current predicting approaches such as optical, physical, and electrical methods have various shortcomings. Hence, the backpropagation (BP) neural network can be applied to avoid the difficulties encountered by conventional approaches. In this article, an advanced prediction model is proposed to obtain accurate IGBT junction temperature. This method can be divided into three phases, BP neural network estimation, interpolation, and Kalman filter prediction. First, the validities of the BP neural network and Kalman filter are verified, respectively. Then, the performances of them are compared, and the superiority of the Kalman filter is proved. In the future, the application of neural networks or deep learning in power electronics will create more possibilities.