Electrically tunable interlayer recombination and tunneling behavior in WSe<sub>2</sub>/MoS<sub>2</sub> heterostructure for broadband photodetector
Chao Tan, Zhihao Yang, Haijuan Wu, Yong Yang, Lei Yang, Zegao Wang
Abstract
A dual-gated WSe 2 /MoS 2 phototransistor is fabricated and investigated. Its conduction and rectification characteristics can be tuned by dual gates showing p–i, p–n, i–n and n–n states, due to the charging and depletion of WSe 2 and MoS 2 .
Topics & Concepts
PhotodetectorOptoelectronicsMaterials scienceHeterojunctionRectificationQuantum tunnellingSemiconductorPhotodiodeInfraredWavelengthVoltageOpticsPhysicsQuantum mechanics2D Materials and ApplicationsNanowire Synthesis and ApplicationsChalcogenide Semiconductor Thin Films