Electrical switching of valley polarization in monolayer semiconductors
Lizhong Li, Shengwei Jiang, Zefang Wang, Kenji Watanabe, Takashi Taniguchi, Jie Shan, Kin Fai Mak
Abstract
Electrical switching of valley polarization in 2D semiconductors could enable fast and energy-efficient optoelectronics devices that communicate with photon helicity but its realization remains challenging because the electronic valley degree of freedom does not directly couple to electric fields. In this paper, by proximity coupling 2D semiconductors to 2D magnets, and by electrically switching the spins of the 2D magnet, reversible electrical switching of the valley polarization has been demonstrated. This study also paves the path for high-speed valleytronics devices.
Topics & Concepts
ValleytronicsMaterials scienceSemiconductorPolarization (electrochemistry)OptoelectronicsHelicitySpinsCondensed matter physicsFerromagnetismSpintronicsPhysicsChemistryParticle physicsPhysical chemistry2D Materials and ApplicationsGraphene research and applicationsPerovskite Materials and Applications