Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
Tianqi Yu, Fuchao He, Jianhui Zhao, Zhenyu Zhou, Jingjing Chang, Jingsheng Chen, Xiaobing Yan
Topics & Concepts
MemristorFerroelectricityMaterials scienceVon Neumann architectureNeuromorphic engineeringMemistorPolarization (electrochemistry)Resistive random-access memoryOptoelectronicsNanotechnologyComputer scienceVoltageElectronic engineeringElectrical engineeringArtificial neural networkArtificial intelligenceDielectricEngineeringChemistryPhysical chemistryOperating systemAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesMXene and MAX Phase Materials