Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor
Parveen Kumar, Balwinder Raj, Girish Wadhwa, Balwinder Singh, Raj Kumar
Abstract
This work is based on the analysis and designing of Gate All Around N + doped layer Nanowire Tunnel Field Effect Transistors (NTFET) without junctions for application in biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS) and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity and tunneling probability is further improved by N + doped layer (1 × 10 20 cm −3 ). The change in the subthreshold-slope (SS), drain current (I D ), transconductance(g m ), and ratio of I ON /I OFF has been examined to detect the sensitivity of the proposed device by confining various biomolecules in the area of nanocavity. The nanocavity area creates a shield in the source gate of oxide layer and electrodes metal. The Junctionless Gate All Around Nanowire Tunnel-Field-Effect-Transistor (JLGAA-NTFET) shows less leakage current and large control on the channel. The design of JLGAA-NTFET is with high doping concentration and observed higher sensitivity for ATS biomolecule which is suitable for sensor design application.