Litcius/Paper detail

T-gate ALGaN/GaN HEMT with effective recess engineering for enhancement mode operation

Daniel Raj Androse, Sanjoy Deb, Saravana Kumar Radhakrishnan, Sekar Elango

2021Materials Today Proceedings22 citationsDOI

Topics & Concepts

High-electron-mobility transistorTransconductanceMaterials scienceOptoelectronicsThreshold voltageVoltageMode (computer interface)Electrical engineeringTransistorEngineeringComputer scienceOperating systemGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices
T-gate ALGaN/GaN HEMT with effective recess engineering for enhancement mode operation | Litcius