Defect-Engineered Semiconducting van der Waals Thin Film at Metal–Semiconductor Interface of Field-Effect Transistors
Jihyun Kim, Dongjoon Rhee, Myeongjin Jung, Gang Jin Cheon, Kangsan Kim, Jae Hyung Kim, Ji Yun Park, Jiyong Yoon, Dong Un Lim, Jeong Ho Cho, In Soo Kim, Donghee Son, Deep Jariwala, Joohoon Kang
Abstract
The significance of metal–semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal–semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal–oxide–semiconductor (channel)–semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS 2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition.