<i>p</i>-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications
Yat Hon Ng, Zheyang Zheng, Li Zhang, Ruizi Liu, Tao Chen, Sirui Feng, Qiming Shao, Kevin J. Chen
Abstract
In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics for operating in an extremely wide temperature range (X-WTR) from 2 to 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler for the high-temperature operation is the wide bandgap that substantially suppresses the thermal excitation of the intrinsic carrier. However, for the low-temperature side, the two-dimensional electron and hole gas (2DEG and 2DHG) channels at the heterojunctions are formed by the temperature-insensitive polarization fields, which free the carriers from freezing out. The monolithically integrated GaN n-FET, p-FET, and the resultant complementary circuits are, therefore, shown to operate in X-WTR.