Self-aligned stitching growth of centimeter-scale quasi-single-crystalline hexagonal boron nitride monolayers on liquid copper
Qing Zhang, Huixin Chen, Suilin Liu, Yinyin Yu, Cuiru Wang, Jian Han, Guosheng Shao, Zhiqiang Yao
Abstract
gate insulator stack to build high performance InGaZnO field-effect transistors (FETs). Full suppression of hysteresis and twofold enhancement of field-effect mobility are realized for InGaZnO FETs built with hBN as the interface dielectric. The facile growth of large quasi-single-crystalline hBN monolayers on liquid Cu paves the way for future high-performance electronics.
Topics & Concepts
Materials scienceMonolayerScatteringEpitaxySingle crystalChemical vapor depositionCrystallographyNanotechnologyChemical engineeringOptoelectronicsOpticsLayer (electronics)ChemistryPhysicsEngineeringGraphene research and applications2D Materials and ApplicationsFerroelectric and Negative Capacitance Devices