Dependence of conduction characteristics on compensation type and lattice structure of SiC photoconductive semiconductor switches
Zhuoyun Feng, Longfei Xiao, Chongbian Luan, Yangfan Li, Huiru Sha, Hongtao Li, Xiangang Xu
Abstract
Semi-insulating (SI) SiC photoconductive semiconductor switches were prepared using two compensation mechanisms: namely vanadium dopants compensation (4H- and 6H-SiC) and deep level defect compensation (4H-SiC). The bias voltage and current of the high-purity (HP) SI 4H-SiC photoconductive semiconductor switch (PCSS) with a channel length of 1 mm reached 24 kV and 364 A, respectively, and the minimum on-state resistance of approximately 1 Ω was triggered by laser illumination at a wavelength of 355 nm. The experimental results show that, in this case, the on-state characteristics of HP 4H-SiC PCSS are superior to those of the vanadium-doped(VD) 4H and 6H-SiC PCSS devices. HP 4H-SiC PCSS shows remarkable waveform consistency. Unlike for VD 4H and 6H-SiC PCSS, the current waveform of HP 4H-SiC PCSS exhibits a tailing phenomenon due to its longer carrier lifetime.