Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
A. Kakanakova‐Georgieva, Gueorgui K. Gueorguiev, Davide G. Sangiovanni, Nattamon Suwannaharn, Ivan G. Ivanov, Ildikó Cora, B. Pécz, Giuseppe Nicotra, Filippo Giannazzo
Abstract
The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing MOCVD processes of AlN on epitaxial graphene.
Topics & Concepts
Intercalation (chemistry)Nanoscopic scaleGrapheneMaterials scienceInterface (matter)Deposition (geology)NanotechnologyChemical engineeringComposite materialInorganic chemistryChemistryGeologyCapillary actionPaleontologyCapillary numberEngineeringSedimentGraphene research and applicationsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices