1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency
Ahmed Ben Slimane, Amadéo Michaud, O. Mauguin, Xavier Lafosse, Adrien Bercegol, Laurent Lombez, Jean‐Christophe Harmand, Stéphane Collin
Abstract
Abstract We report on AlGaAs‐based heterojunction solar cells grown by solid source molecular beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p‐AlGaAs base with tunable bandgap, and a thin 50 nm n‐InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2‐μm‐thick AlGaAs layer and a bandgap of 1.73 eV, suitable for high efficiency Si‐based tandem devices.
Topics & Concepts
OptoelectronicsMaterials scienceHeterojunctionMolecular beam epitaxySolar cellBand gapCommon emitterLayer (electronics)Energy conversion efficiencyEpitaxyNanotechnologysolar cell performance optimizationSemiconductor Quantum Structures and DevicesChalcogenide Semiconductor Thin Films