Heterogeneous photodiodes on silicon nitride waveguides
Qianhuan Yu, Junyi Gao, Nan Ye, Baiheng Chen, Keye Sun, Linli Xie, Kartik Srinivasan, Michalis N. Zervas, Gabrielė Navickaitė, Michael Geiselmann, Andréas Beling
Abstract
Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si 3 N 4 ) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.