First principal calculations of electronic, optical and magnetic properties of cubic K <sub>1−x</sub> Y <sub>x</sub> NbO <sub>3</sub> (Y = Fe, Ni)
Muhammad Hasnain Jameel, Te-Te Xu, Zhenyi Jiang, Mohd Arif Agam, Muhammad Sufi Roslan, Afroj Farhina, Maytham Qabel Hamzah, Faiza Rafique
Abstract
Abstract The First principle study based on Density Function Theory (DFT) was accomplished to explore the electronic bandgap configurations of KNbO 3 by transition metal doping such as Iron [Fe], and Nickel [Ni] using PBE-GGA (Perdew–Burke–Ernzerhof- Generalized Gradient Approximation) for the exchange-correlation potentials. In the current study K 1−x Y x NbO 3 doped with various percentages (12.5%, 25%, 50%, and 75%) of [Ni] and [Fe] metal ions. Different unique properties such as electronic, optical conductivity, and magnetic properties of cubic K 1−x Y x NbO 3 (Y = Fe, Ni) compounds have been calculated through the FP-LAW WEIN2k software within DFT. The bandgap of KNbO 3 can be reduced by doping various metal ions such as [Ni] and [Fe]. The spin up band structures was observed semiconductor but spin down metallic behaviour. The bandgap structure of overall K 1−x Y x NbO 3 (Y = Fe, Ni) compound after doping [Fe] and [Ni] with various concentrations become half metallic compound. Under the DFT scheme, iron [Fe] and nickel [Ni] are reliable as dopants for reducing the bandgap of KNbO 3 . After substituting various impurity concentration (12.5%, 25%, 50%, and 75%) of [Fe] and [Ni] the energy absorption peaks are 8.2 to 8.43eV for K 1−x Y x NbO 3 (Y = Fe, Ni). It is also observed that optical conductivity starting points shift towards the large energy because of bandgap enhancement when the doping concentration (12.5%, 25%, 50%, and 75%) of [Fe] and [Ni] increased in K 1−x Y x NbO 3 (Y = Fe, Ni) compound. Magnetic moment was increasing 1.00153 to 3.02210 μ B by the increment of doping [Fe] and [Ni] concentrations. K 1−x Y x NbO 3 (Y = Fe, Ni) compounds are appropriate perovskite oxides materials for promising optical, magnetic and photovoltaic device applications.