High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors
Eva Bestelink, Pongsakorn Sihapitak, Ute Zschieschang, Leslie Askew, John M. Shannon, Juan Paolo Bermundo, Yukiharu Uraoka, Hagen Klauk, Radu A. Sporea
Abstract
Complementary inverters using IGZO n-channel and DNTT p-channel source-gated transistors are demonstrated for the first time. They exhibit gain of 368 V V −1 , 94% noise margin and matching on-current for relatively similar widths.
Topics & Concepts
Materials scienceTransistorOptoelectronicsChannel (broadcasting)Noise (video)High-gain antennaVoltageElectrical engineeringComputer scienceImage (mathematics)Artificial intelligenceEngineeringAdvancements in Semiconductor Devices and Circuit DesignAnalog and Mixed-Signal Circuit DesignAdvanced Memory and Neural Computing