Controlled 2D growth approach <i>via</i> atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors
Hye‐Mi Kim, Won-Bum Lee, H.S. Koo, Seo-Yeong Kim, Jin‐Seong Park
Abstract
Atomic layer deposition based controlled lateral growth leads the formation of 2D-like SnO thin film. This approach also enabled the fabrication of record stability of SnO TFTs and flexible SnO TFT, stable until 10,000 cycles of bending tests.
Topics & Concepts
Materials scienceAtomic layer depositionThin-film transistorLayer (electronics)FabricationThin filmDeposition (geology)OptoelectronicsNanotechnologyTransistorLayer by layerAtomic layer epitaxyElectrical engineeringVoltagePaleontologySedimentEngineeringAlternative medicinePathologyBiologyMedicineThin-Film Transistor TechnologiesZnO doping and propertiesNanowire Synthesis and Applications