Broadband GaN MMIC Doherty Power Amplifier Using Continuous-Mode Combining for 5G Sub-6 GHz Applications
Jingzhou Pang, Chenhao Chu, Jiayan Wu, Zhijiang Dai, Mingyu Li, Songbai He, Anding Zhu
Abstract
This article presents a broadband fully integrated Doherty power amplifier (DPA) using a continuous-mode combining load. It is illustrated that the continuous-mode impedance condition in back-off and saturation for Doherty operation can be achieved with a simple impedance inverter network (IIN) that can be realized using lumped components in gallium nitride (GaN) monolithic microwave integrated circuits (MMICs). A DPA was designed and fabricated using the 250-nm GaN process to validate the proposed architecture and design methodology. The fabricated DPA chip attains around 8 W saturated power from 4.1 to 5.6 GHz. About 38.5%–46.5% drain efficiencies are achieved at 6-dB output power back-off within the entire design band. When driven by a 100-MHz OFDM signal with 6.5-dB peak-to-average power ratio (PAPR), the proposed DPA achieves better than −45-dBc adjacent channel leakage ratio (ACLR) and higher than 38% average efficiency at 4.4 and 5.2 GHz after digital predistortion.