Current transient response and role of the internal resistance in HfOx-based memristors
Mireia Bargalló González, Marcos Maestro-Izquierdo, F. Jiménez-Molinos, J.B. Roldán, F. Campabadal
Abstract
Filamentary-type valence change memristors based on HfO2 are currently being explored as potential candidates to emulate the synaptic functionality of biological inspired neuromorphic circuits due to their ability to tune their resistance state (synaptic weight) needed to optimize their learning mechanisms. In this paper, the resistive switching dynamics associated with the electric field and temperature-assisted oxygen vacancy/ion migration, generation, and recombination processes is investigated in-depth through current transient experiments. Special attention is given to the influence of the intrinsic series resistance and applied voltage on the switching speed and on the abrupt or gradual resistance modulation capability, providing a deeper insight into the key parameters that have a crucial influence in the SET and RESET transitions and can strongly impact the programming energy consumption of redox-based HfO2-memristors.