Sub-bandgap absorption and photo-response of molybdenum heavily doped black silicon fabricated by a femtosecond laser
Yang Yang, Ji-Hong Zhao, Chao Li, Qi‐Dai Chen, Zhanguo Chen, Hong‐Bo Sun
Abstract
Molybdenum (Mo)-doped black silicon (Si) is obtained by using femtosecond laser irradiation. The concentration of Mo atoms at the depth from 10 to 200 nm has exceeded <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>19</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">c</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>−</mml:mo> <mml:mn>3</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> . In contrast, the carrier concentration in the Mo-doped layer is lower than <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>15</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">c</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>−</mml:mo> <mml:mn>3</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> . The surface morphologies with ripple and conical spike microstructures are formed by changing the pulsed laser fluences. The Mo-doped Si samples exhibit a sub-bandgap ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>1100</mml:mn> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼</mml:mo> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>2500</mml:mn> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">n</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:mrow> </mml:math> ) absorptance of more than 60% at a wavelength of 1310 nm. A Mo-doped Si photodetector is made, and the responsivity of the device for 1310 nm is up to 76 mA/W at a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>−</mml:mo> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">V</mml:mi> </mml:mrow> </mml:math> bias.