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An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications

B. Mounika, J. Ajayan, Sandip Bhattacharya

2023Microelectronic Engineering14 citationsDOI

Topics & Concepts

High-electron-mobility transistorMaterials scienceOptoelectronicsDopingHeterojunctionDislocationMicrowaveSchottky barrierTransistorElectrical engineeringPhysicsVoltageComposite materialDiodeQuantum mechanicsEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSilicon Carbide Semiconductor Technologies
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications | Litcius