High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In<sub>2</sub>Se<sub>3</sub>/MoTe<sub>2</sub> van der Waals heterostructures
Leitao Lei, Yan-Hong Zhou, Xiaohong Zheng, Wenqiang Wan, Weiyang Wang
Abstract
Ferroelectric polarization-controlled band alignment can be realized in van der Waals heterostructures (vdWHs), which can be used to create new types of ferroelectric tunnel junctions (FTJs).
Topics & Concepts
Quantum tunnellingHeterojunctionFerroelectricityvan der Waals forceCondensed matter physicsMaterials scienceNanotechnologyChemical physicsOptoelectronicsPhysicsQuantum mechanicsMoleculeDielectric2D Materials and ApplicationsPerovskite Materials and ApplicationsQuantum Dots Synthesis And Properties