Room-Temperature Photochromism of Silicon Vacancy Centers in CVD Diamond
A. A. Wood, Artur Lozovoi, Zi-Huai Zhang, Sachin Sharma, Gabriel I. López‐Morales, Harishankar Jayakumar, Nathalie P. de Leon, Carlos A. Meriles
Abstract
The silicon vacancy (SiV) center in diamond is typically found in three stable charge states, SiV 0, SiV –, and SiV 2–, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photoluminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV 0 via the two-step capture of diffusing, photogenerated holes, a process we expose both through direct SiV 0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. In addition, we show that continuous red illumination induces the converse process, first transforming SiV 0 into SiV – and then into SiV 2– . Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.