Litcius/Paper detail

Frequency and temperature dependence of dielectric properties and capacitance–voltage in GO/TiO2/n-Si MOS device

A. Ashery, S. A. Gad, H. Shaban

2020Applied Physics A24 citationsDOI

Topics & Concepts

CapacitanceMaterials scienceDielectricFrequency dependenceOptoelectronicsVoltageCondensed matter physicsAnalytical Chemistry (journal)Electrical engineeringChemistryPhysicsNuclear magnetic resonanceElectrodeEngineeringPhysical chemistryChromatographySemiconductor materials and devicesSemiconductor materials and interfacesSilicon Nanostructures and Photoluminescence