Avalanche Photodiodes With Composite Charge-Layers for Low Dark Current, High-Speed, and High-Power Performance
N. Naseem, Zohauddin Ahmad, Yan-Min Liao, Po‐Shun Wang, Sean Yang, Shengyun Wang, Hsiang‐Szu Chang, H.-S. Chen, Jack Jia‐Sheng Huang, Emin Chou, Yu‐Heng Jan, Jin‐Wei Shi
Abstract
In this work, a novel In<sub>0.52</sub>Al<sub>0.48</sub>As based top-illuminated avalanche photodiode (APD) is demonstrated. By combining the composite charge-layer design with a special p-side up etched mesa structure to zero the electric (E)-field at the periphery of this APD's multiplication (M-) layer, the edge breakdown phenomenon can be eliminated. This in turn leads to the simultaneous high-speed, high-saturation-power, high responsivity, and low-dark current performance characteristics of our APDs, which are essential for high-performance coherent receiver applications. The demonstrated device, with its simple top-illuminated structure exhibits a wide optical-to-electrical (O-E) bandwidth (21 GHz), high responsivity (5.5 A/W at 0.9 V<sub>br</sub>), and saturation current as high as 8 mA with a large active diameter of 24 μm for easy optical alignment. Furthermore, the nonlinear driving of a wavelength sweeping laser in the self-heterodyne beating setup can generate an optical pulse train like waveform, providing an effective optical modulation depth of up to 158%, which leads to a maximum photo-generated RF power (at 10 GHz) from our APD as high as +5.5 dBm. The excellent performance of our demonstrated APDs opens up new possibilities for the next generation of coherent receivers.