A review of metal–semiconductor contacts for β-Ga<sub>2</sub>O<sub>3</sub>
Chao Lu, Xueqiang Ji, Zeng Liu, Xu Yan, Nianpeng Lu, Peigang Li, Weihua Tang
Abstract
Abstract β -Gallium oxide ( β -Ga 2 O 3 ) has been studied extensively in recent decades due to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors and power devices. However, as an important part of a device, related investigations of β -Ga 2 O 3 –metal contacts, especially for Schottky contacts, are rare. In this review, we summarize recent research progress on β -Ga 2 O 3 –metal contacts, including related theories, measurements, fabrication processes, control methods, etc. This review will provide insights for both theoretical understanding of the metal/semiconductor interface, as well as the fabrication process for engineering applications of Ga 2 O 3 -based devices.