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Monolithically integrated 112 Gbps PAM4 optical transmitter and receiver in a 45 nm CMOS-silicon photonics process

Thomas Baehr-Jones, Shahab Ardalan, Matthew P. Chang, Saman Jafarlou, Xavier Serey, G. Zarris, Gabriel Thompson, Artsroun Darbinian, Brian R. West, Babak Behnia, Vesselin Velev, Yun Zhe Li, Katherine E. Roelofs, Wuchun Wu, Jim Mali, Jiahao Zhan, Noam Ophir, Chris Horng, Romanas Narevich, Fen Guan, Jinghui Yang, Hao Wu, Patrick Maupin, Rhys Manley, Yogi Ahuja, Ari Novack, Lei Wang, Matthew Streshinsky

2023Optics Express16 citationsDOIOpen Access PDF

Abstract

We demonstrate a transmitter and receiver in a silicon photonics platform for O-band optical communication that monolithically incorporates a modulator driver, traveling-wave Mach-Zehnder modulator, control circuitry, photodetector, and transimpedance amplifier (TIA) in the GlobalFoundries Fotonix (45SPCLO) platform. The transmitter and receiver show an open 112 Gbps PAM4 eye at a 4.3 pJ/bit energy efficiency, not including the laser. Extensive use of gain-peaking enables our modulator driver and TIA to achieve the high bandwidths needed in the 45 nm CMOS-silicon photonics process. Our results suggest an alternative to the frequent approach of bump-bonding BiCMOS drivers and TIAs to silicon photonics.

Topics & Concepts

Transimpedance amplifierSilicon photonicsTransmitterPhotonicsElectro-optic modulatorOptical amplifierBiCMOSOptoelectronicsCMOSAmplifierMaterials scienceOptical modulatorOpticsComputer sciencePhysicsElectrical engineeringLaserPhase modulationTelecommunicationsEngineeringPhase noiseDifferential amplifierTransistorChannel (broadcasting)VoltagePhotonic and Optical DevicesOptical Network TechnologiesAdvanced Photonic Communication Systems
Monolithically integrated 112 Gbps PAM4 optical transmitter and receiver in a 45 nm CMOS-silicon photonics process | Litcius