Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO<sub>2</sub> Insets
Aleksandra Koroleva, Аnna G. Chernikova, Sergei Zarubin, Е. В. Коростылев, Roman R. Khakimov, Maksim Zhuk, Andrey M. Markeev
Abstract
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Topics & Concepts
TinFerroelectricityMaterials scienceCapacitorMonoclinic crystal systemAtomic layer depositionLayer (electronics)Polarization (electrochemistry)Composite materialOptoelectronicsDielectricVoltageElectrical engineeringMetallurgyCrystallographyChemistryEngineeringPhysical chemistryCrystal structureFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials