Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
Yue Peng, Genquan Han, Fenning Liu, Wenwu Xiao, Yan Liu, Ni Zhong, Chun‐Gang Duan, Ze Feng, Hong Dong, Yue Hao
Abstract
Abstract Traditional ferroelectric devices suffer a lack of scalability. Doped HfO 2 thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline nature. Stable ferroelectric-like behavior is firstly demonstrated in a 3.6-nm-thick amorphous Al 2 O 3 film. The amorphous Al 2 O 3 devices are highly scalable, which enable multi-gate non-volatile field-effect transistor (NVFET) with nanometer-scale fin pitch. It also possesses the advantages of low process temperature, high frequency (~GHz), wide memory window, and long endurance, suggesting great potential in VLSI systems. The switchable polarization ( P ) induced by the voltage-modulated oxygen vacancy dipoles is proposed.