Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs
Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Tongde Li, Dongqing Hu, Yu Wu, Zhonghan Deng
Topics & Concepts
Materials scienceTrenchGate oxideOptoelectronicsShallow trench isolationMOSFETLeakage (economics)OxideSubstrate (aquarium)Silicon carbideIrradiationBreakdown voltageRadiation damageThermalElectrical engineeringVoltageNanotechnologyComposite materialTransistorEngineeringMetallurgyPhysicsMacroeconomicsOceanographyLayer (electronics)MeteorologyGeologyEconomicsNuclear physicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesRadiation Effects in Electronics