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Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

Pradip Dalapati, Shunsuke Urata, Takashi Egawa

2020Superlattices and Microstructures31 citationsDOI

Topics & Concepts

SuperlatticeMaterials scienceHigh-electron-mobility transistorOptoelectronicsElectron mobilityLayer (electronics)DislocationTransmission electron microscopyTransistorSiliconNanotechnologyComposite materialElectrical engineeringVoltageEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties
Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures | Litcius