High-Voltage β-Ga<sub>2</sub>O<sub>3</sub> RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel
Xinxin Yu, Hehe Gong, Jianjun Zhou, Zhenghao Shen, Wenhui Xu, Tiangui You, Jian Wang, Shengnan Zhang, Yingmin Wang, Kai Zhang, Ran Tao, Yun Wu, Fangfang Ren, Xin Ou, Yuechan Kong, Zhonghui Li, Tangsheng Chen, Dunjun Chen, Shulin Gu, Youdou Zheng, Jiandong Ye, Rong Zhang
Abstract
We report radio-frequency (RF) MOSFETs with a two-dimensional-electron-gas-like (2DEG-like) channel formed at the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> surface through the low-energy implantation of Si and rapid thermal activation process. The shallowly implanted channel exhibits a strong electron confinement near surface with a high sheet concentration of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3}.{2}\times {10} ^{{13}}$ </tex-math></inline-formula> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup> . With the high scaling of gate length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {G}}{)}$ </tex-math></inline-formula> , the current cut-off frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {T}}{)}$ </tex-math></inline-formula> and maximum oscillation frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}{)}$ </tex-math></inline-formula> were inversely proportional to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {G}}$ </tex-math></inline-formula> along with a high electron saturation velocity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${2}.{7}\times {10} ^{{6}}$ </tex-math></inline-formula> cm/s. The device with a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {G}}$ </tex-math></inline-formula> of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.15 ~\mu \text{m}$ </tex-math></inline-formula> demonstrates a high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {T}}$ </tex-math></inline-formula> of 29 GHz and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{\text {max}}$ </tex-math></inline-formula> of 35 GHz, whilst preserving the high-voltage operation capability with a drain-to-source breakdown voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$BV_{\text {DS}}{)}$ </tex-math></inline-formula> of 193 V. RF performance was verified by the power amplifying capability with a maximum power gain of 7 dB at 2 GHz for the device with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {G}}$ </tex-math></inline-formula> of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.5~\mu \text{m}$ </tex-math></inline-formula> .