Coupling-decoupling of conducting topological surface states in thick <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">B</mml:mi><mml:msub><mml:mi mathvariant="normal">i</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> single crystals
Amit Jash, Sayantan Ghosh, A. Bharathi, S. S. Banerjee
Abstract
Sensitive ac-susceptibility measurements of a topological insulator, $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ single crystal, using mutual two coil inductance technique shows coupling and decoupling of high conducting surface states. The coupling of the surface states exists upto thickness of 70 microns, which is much larger than the direct coupling limit of thickness \ensuremath{\sim}5 to 10 nanometers found in thin films. The high conducting topological surface states are coupled through the crystal via high electrically conducting channels, generated by Selenium vacancies. These conducting channels through the bulk disintegrate beyond 70 \ensuremath{\mu}m thickness and at high temperatures, thereby leading to decoupling of the topological surface states. We show the decoupled surface states persist upto room temperature in the topological insulator. Analysis of Nyquist plot of ac-susceptibility response of the TI using a resistor (R)--inductor (L) model shows an inductive nature of the coupling between surface states found in these $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ crystals.