Effects of mechanical fields on mobile charges in a composite beam of flexoelectric dielectrics and semiconductors
Yilin Qu, Feng Jin, Jiashi Yang
Abstract
We study the interaction between mechanical fields and the motion of charge carriers in a composite beam of flexoelectric (nonpiezoelectric) and semiconductor layers. The macroscopic theory of flexoelectricity and the drift-diffusion theory of semiconduction are used. They are coupled by doping and mobile charges in Gauss's equation of electrostatics. A one-dimensional electromechanical model is established for the bending of the beam. Solutions from the model show that bending of the beam induces redistribution of charge carriers through the electric field produced by flexoelectric coupling. This provides a new means for constructing electromechanical semiconductor devices and extends piezotronic devices.
Topics & Concepts
Materials scienceSemiconductorElectric fieldCondensed matter physicsDielectricFlexoelectricityElectrostaticsDopingCharge carrierBeam (structure)BendingOptoelectronicsComposite materialPhysicsOpticsQuantum mechanicsNonlocal and gradient elasticity in micro/nano structuresMechanical and Optical ResonatorsVibration and Dynamic Analysis