Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides
Shahid Iqbal, Le Thai Duy, Hyun‐Woo Kang, Ranveer Singh, Mohit Kumar, Jucheol Park, Hyungtak Seo
Abstract
Abstract To realize the potential of Mott transition of multiphasic vanadium oxides (VO x ) for memory applications, the development of VO x memtransistors on SiO 2 wafer is introduced. Through electrical characterizations, the volatile memory behaviors of the VO x memtransistors are observed in both two‐ and three‐terminal measurements. Their capacitive memory and resistive switching mechanisms are strongly related to the mixed VO x /SiO 2 interface (called VSiO x ). VSiO x supports the Mott transition in VO x at low bias voltages (<0.5 V), leading to the low power consumption of the memtransistor. Moreover, the fast switching time (≈35 ns) and tunable memory retention with the synaptic functions (potentiation and depression) of the memtransistors (by using the gate and drain biases) are demonstrated. Overall, the findings open up major opportunities for constructing ultrafast and femto‐joule power‐consuming neuromorphic devices.