High-Speed Memory Driven by SFQ Pulses Based on 0-π SQUID
Yuto Takeshita, Feng Li, Daiki Hasegawa, Kyosuke Sano, Masamitsu Tanaka, Taro Yamashita, Akira Fujimaki
Abstract
We propose a new cryogenic high-speed and low-power matrix memory required for achieving a high-performance superconductor computing system. The memory cell is based on the 0-π SQUID with conventional Josephson junctions (0-junctions) and a π-shifted ferromagnetic Josephson junction (π-junction). The memory state is stored in the form of two stable states in the 0-π SQUID. The π shift feature of the π-junction eliminates the need for any bias current or magnetic field for the formation of two states, i.e., the memory is non-volatile. In this memory, an impulse-shaped voltage signal generated in single-flux-quantum (SFQ) circuits is used for the write and read operations of the memory state. By using the pulses propagating in passive transmission lines, high-speed and low-power operation can be achieved because a recharging process determining the operation speed and the dominant energy consumption can be eliminated. We fabricated the 0-π SQUID-based pulse-driven memory cells with an SFQ driver. From the static characteristics, we confirmed that the current needed for rewriting can be sufficiently reduced. In addition, we successfully demonstrated the correct write operation in the memory cell by the SFQ pulse train transmitted from the SFQ driver via the passive transmission line.