Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption
June‐Mo Yang, Young‐Kwang Jung, Ju-Hee Lee, Yong Churl Kim, Soyeon Kim, Seunghwan Seo, Dong-Am Park, Jeonghyeon Kim, Se-Yong Jeong, Intaek Han, Jin‐Hong Park, Aron Walsh, Nam‐Gyu Park
Abstract
and Au is verified, where migration of iodide vacancies and asymmetric carrier transport owing to the effective hole mass is three times heavier than effective electron mass are found to play critical roles in controlling the conductance, leading to high resistance. There was little difference in synaptic weight updates with high linearity and 250 states before and after bending the flexible device. Moreover, the MNIST-based recognition rate of over 90% is maintained upon bending, indicative of a promising candidate for highly efficient flexible artificial synapses.