Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide
Tilo H. Yang, Bor-Wei Liang, Hsiang-Chi Hu, Fu‐Xiang Rikudo Chen, Sheng‐Zhu Ho, Wen-Hao Chang, Liu Yang, Han-Chieh Lo, Tzu-Hao Kuo, Jyun‐Hong Chen, Po‐Yen Lin, Kristan Bryan Simbulan, Zhaofeng Luo, Alice Chinghsuan Chang, Yi-Hao Kuo, Y. H. Ku, Yi-Cheng Chen, You-Jia Huang, Yu-Chen Chang, Yu-Fan Chiang, Ting‐Hua Lu, M. H. Lee, Kai‐Shin Li, Menghao Wu, Yi‐Chun Chen, Chun‐Liang Lin, Yann‐Wen Lan
Topics & Concepts
FerroelectricityMaterials scienceMolybdenum disulfideTransistorOptoelectronicsElectric fieldPolarization (electrochemistry)Field-effect transistorNon-volatile memoryVoltageElectrical engineeringChemistryComposite materialPhysicsEngineeringPhysical chemistryQuantum mechanicsDielectricFerroelectric and Negative Capacitance Devices2D Materials and ApplicationsAdvanced Memory and Neural Computing