Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model
Nicholas C. Miller, Neil Moser, Robert Fitch, J. Gillespie, Kyle J. Liddy, Dennis E. Walker, Andrew J. Green, Kelson D. Chabak, Michael Elliott, Ryan Gilbert, Richard W. Young, Elizabeth Werner, Miles Lindquist, Patrick Roblin
Abstract
This paper presents for the first time an investigation of the ASM-HEMT model large-signal accuracy across a wide range of operating frequencies. Comparisons between measured and simulated power sweeps are presented at 10, 20 and 30 GHz. Load-pull measurements and simulations are compared spanning the same frequency range. The large-signal simulations of a single ASM-HEMT model exhibit excellent agreement with all power measurements.
Topics & Concepts
High-electron-mobility transistorLoad pullKa bandSIGNAL (programming language)Nonlinear systemPower (physics)Wide-bandgap semiconductorMaterials scienceRange (aeronautics)Gallium nitrideOptoelectronicsLarge-signal modelElectronic engineeringComputer scienceElectrical engineeringPhysicsEngineeringAmplifierTransistorVoltageLayer (electronics)Composite materialCMOSQuantum mechanicsProgramming languageGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignAdvanced Power Amplifier Design