Modulating the resistive switching stability of HfO<sub>2</sub>-based RRAM through Gd doping engineering: DFT+<i>U</i>
Dong-Lan Zhang, Jiong Wang, Qing Wu, Yong Du
Abstract
Oxide-based resistive random access memory (RRAM) is standing out in both non-volatile memory and the emerging field of neuromorphic computing, with the consequence of increasing performance demands.
Topics & Concepts
Resistive random-access memoryDopingResistive touchscreenMaterials scienceStability (learning theory)OptoelectronicsNanotechnologyEngineering physicsCondensed matter physicsElectrical engineeringPhysicsComputer scienceEngineeringVoltageMachine learningAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices