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Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors

Chuangye Yao, Jiacheng Li, Santhosh Kumar Thatikonda, Yifu Ke, Ni Qin, Dinghua Bao

2020Journal of Alloys and Compounds24 citationsDOI

Topics & Concepts

Materials scienceMagnetizationThin filmBilayerNanocrystalline materialSchottky diodeOptoelectronicsCondensed matter physicsNanotechnologyChemistryMagnetic fieldPhysicsMembraneBiochemistryQuantum mechanicsDiodeAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials
Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors | Litcius