Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
Davide Colucci, Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb, Yannick De Koninck, Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, R. Langer, Dries Van Thourhout, Bernardette Kunert
Abstract
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby serves as a tunable base for the integration of diverse device hetero-layers. To demonstrate the flexibility of this approach, we realized an O-band nano-ridge laser containing three In 0.45 Ga 0.55 As quantum wells, which are pseudomorphically strained to an In 0.25 Ga 0.75 As nano-ridge base. The demonstration of an optically pumped nano-ridge laser operating around 1300 nm underlines the potential of this cost-efficient and highly scalable integration approach for silicon photonics.