Observation of Topological Flat Bands in the Kagome Semiconductor Nb<sub>3</sub>Cl<sub>8</sub>
Zhenyu Sun, Hui Zhou, Cuixiang Wang, Shiv Kumar, Daiyu Geng, Shaosheng Yue, Xin Han, Yuya Haraguchi, K. Shimada, Peng Cheng, Lan Chen, Youguo Shi, Kehui Wu, Sheng Meng, Baojie Feng
Abstract
The destructive interference of wavefunctions in a kagome lattice can give rise to topological flat bands (TFBs) with a highly degenerate state of electrons. Recently, TFBs have been observed in several kagome metals, including Fe3Sn2, FeSn, CoSn, and YMn6Sn6. Nonetheless, kagome materials that are both exfoliable and semiconducting are lacking, which seriously hinders their device applications. Herein, we show that Nb3Cl8, which hosts a breathing kagome lattice, is gapped out because of the absence of inversion symmetry, while the TFBs survive because of the protection of the mirror reflection symmetry. By angle-resolved photoemission spectroscopy measurements and first-principles calculations, we directly observe the TFBs and a moderate band gap in Nb3Cl8. By mechanical exfoliation, we successfully obtain monolayer Nb3Cl8, which is stable under ambient conditions. In addition, our calculations show that monolayer Nb3Cl8 has a magnetic ground state, thus providing opportunities to study the interplay among geometry, topology, and magnetism.