Investigation of non-volatile and photoelectric storage characteristics for MoS2/h-BN/graphene heterojunction floating-gate transistor with the different tunneling layer thicknesses

Wei Li, Tianhui Mu, Yuhua Chen, Mingjian Dai, Pengcheng Sun, Jiaying Li, Weilin Li, Zhanzi Chen, Zhuowen Wang, Ruijing Yang, Zhao Chen, Yucheng Wang, Yupan Wu, Shaoxi Wang, Yupan Wu, Shaoxi Wang