Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer
Phu Tran Phong Le, Johan E. ten Elshof, Gertjan Koster
Abstract
Abstract Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO 3 thin films using Sr 3 Al 2 O 6 water-sacrificial layer. The epitaxial Sr 3 Al 2 O 6 (011) and Sr 3 Al 2 O 6 (111) layers were realized on SrTiO 3 (011) and SrTiO 3 (111), respectively. Subsequently, SrRuO 3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO 3 (011) pc and SrRuO 3 (111) pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.