A MoSSe/MXene-Based High Performance UV-Vis-NIR Photodetector
C. J. Keerthi, Sayan Halder, Sohel Siraj, Chanchal Chakraborty, Parikshit Sahatiya, Subhradeep Pal
Abstract
In this letter, we report a hydrothermally synthesized MoSSe-based wideband photodetector (PD) offering excellent responsivity with sub-second response time. The overall device structure is MXene/MoSSe/Ag with Si as the substrate. The cathode and anode contact of the PD is fabricated with MXene (Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Tx) and Ag, respectively. The Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Tx and MoSSe layers are deposited using the spin-coating method, while the Ag electrode is deposited using the thermal evaporation technique. The fabricated PD exhibits excellent photodetection capability between 350 nm to 950 nm with a peak responsivity of 8.89 A.W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> at 460 nm. The measured value of external quantum efficiency (EQE), and detectivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D^{*}$ </tex-math></inline-formula> ) of the PD at 420 nm at 24.96% and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$9.07 \times 10^{9}$ </tex-math></inline-formula> Jones, respectively. Also, the linearity measurement indicates the efficacy of the PD up to 343 K. In terms of transient performance, the measured rise and fall time of the PD are approximately 0.12 sec and 0.13 sec, respectively.