Alpha particle detection based on a NiO/β-Ga2O3 heterojunction diode
Leidang Zhou, Hao Chen, Yuxin Deng, Silong Zhang, Liang Chen, Xing Lü, Xiaoping Ouyang
Abstract
Alpha particle detection has been achieved using a NiO/β-Ga2O3 heterojunction diode (HJD) detector, demonstrating the great potential of β-Ga2O3 devices for ionizing particle detection. Featuring a large area (700 × 700 μm2) and a low reverse leakage current (10−10 A), the HJD detector exhibited apparent energy spectra of 239Pu-generated alpha particles with an energy of 5.155 MeV at various bias voltages from −20 to −150 V. The peak energy of the energy spectra increased with the bias voltages. In contrast, the full width at half-maximum of the spectra was almost unchanged at high bias voltages, leading to an increased energy resolution with the increase in the bias voltages. The detector's charge collection efficiency (CCE) and energy resolution reached 14.82% and 17.54% at −150 V, respectively. The compromised CCE and energy resolution were revealed to be limited by the insufficient depletion width of the NiO/β-Ga2O3 HJD.