Electric Field Screening in Gate‐Tunable van der Waals 2D‐Metal/InSe Junctions
Tao Shen, Jia Liu, Xinyi Liu, Peng Cheng, Ji‐Chang Ren, Shuang Li, Wei Liu
Abstract
Abstract The prediction of the dielectric response in 2D metal–semiconductor junctions (MSJs) is challenging since the screening is inhomogeneous. Herein, a generalized model is proposed to uncover the relationship between interfacial electrostatic screening and the modulation of Schottky barrier height (Φ SB ) in 2D MSJs. This model is developed based on the effective dielectric constant, interfacial distance, and van der Waals gap that sheds light on the profound difference between dielectric screening in 2D and conventional MSJs. This model can predict the variation of Φ SB for a series of 2D MSJs. Combining thermionic field emission theory with the model, several compatible 2D metals are provided for low‐dimensional electronics, among which the α‐graphyne‐based junction exhibits the largest on/off ratio.